射频离子辐射损伤的激光退火  

Laser annealing of RF ion radiative damage

作　　者：孙金坛[1] 程国义[1] 王和庆[1] 

机构地区：[1]合肥工业大学

出　　处：《激光杂志》1985年第6期300-302,299,共4页Laser Journal

摘　　要：本文介绍了等离子刻蚀和去胶对MOS、MNOS电容器和双极晶体管所产生的辐射损伤的激光退火,用连续CO_2激光器从背面照射蕊片,可以明显地降低各种MIS结构中的固定电荷和界面陷阱,完全消除辐射损伤,使被损伤的器件特性得到恢复并有所改善,使集成电路成品率明显提高。The paper presents laser annealing of radiative damage on MOS,MNOS capacitors and bipolar transistors exposed to plasma etching and strip resist. Excess fixed charge and surface states densities in various MIS structures have been successfully reduced by CW CO2 laser irradiation from back surface. The radiative damage has been effectively removed by this technique. It can restore and improve the characteristics of radiated damage devices, The yield of IC has been obviously raised.

关 键 词：等离子刻蚀 辐射损伤 激光退火 连续CO2激光器 射频 OS电容器 MIS结构 界面陷阱 固定电荷 器件特性 

分 类 号：TN405.98[电子电信—微电子学与固体电子学] Q691[生物学—生物物理学]