Ta-W合金的化学机械抛光实验研究  

The Experiments Research of Ta-W Alloy Chemical Mechanical Polishing

作　　者：舒行军[1] 何建国[1] 陶继忠[1] 戴晓静[1] 刘玉岭[2] 

机构地区：[1]中国工程物理研究院机械制造工艺研究所,四川绵阳621900 [2]河北工业大学微电子技术与材料研究所,天津300130

出　　处：《润滑与密封》2006年第3期78-80,83,共4页Lubrication Engineering

基　　金：中国工程物理研究院预研项目

摘　　要：针对Ta-W合金材料圆薄片零件化学机械抛光工艺，设计了Ta-W合金材料化学机械抛光抛光液，并探讨了抛光液各组分的含量及抛光工艺参数对抛光速率和抛光件表面质量的影响。结果表明，当抛光液中磨料SiO2溶胶质量分数为40％-65％时，抛光速率也达到较高值并在一定的硅溶胶含量范围内波动不大；当抛光液中有机碱的质量分数为4％-6％时，抛光速率达到最大值；随着氧化剂含量的增加，去除速率几乎成线性增加，但随氧化剂含量的增大表面状态变差，故应控制氧化剂的含量；随着抛光液流量的增加，抛光速率也增大，但在流量增加到200mL／min后，速率的增加变得缓慢。A kind of chemical mechanical polishing（CMP） alkalescence slurry was designed for polishing Ta-W material. The influences of the contents of SiO2 particle, oxidizer and different composition additive in the prepared alloy slurry on the polishing velocity and the polished surface quality in the CMP of Ta-W alloy material were investigated. Resuhs indicate that when the content of SiO2 particle is 40% -65% ,the polishing velocity is high and steady; when the content of organic alkali is 4% -6%, the polishing velocity reachs a maximum;with the increase of oxidizer content ,the material removal amount is linearly increased, but with the increase of oxidizer, the quality of the polished surfaces becomes bad ; with the increase of slurry flux, the material removal amount is increased.

关 键 词：化学机械抛光 抛光液 抛光速率 

分 类 号：TN47[电子电信—微电子学与固体电子学]