感应耦合等离子体选择性刻蚀GaN/AlGaN  

Selective etching of GaN/ AlGaN by Inductively coupled plasma

作　　者：王冲[1] 冯倩[1] 郝跃[1] 杨燕[1] 

机构地区：[1]西安电子科技大学宽禁带半导体材料与器件教育部重点实验室,陕西西安710071

出　　处：《西安电子科技大学学报》2006年第4期520-523,共4页Journal of Xidian University

基　　金：国家重大基础研究项目(973)资助(2002CB311904);国家部委预研项目资助(41308060106)

摘　　要：采用Cl2/Ar作为刻蚀气体,研究了在感应耦合等离子体干法刻蚀GaN、Al0.27Ga0.73N材料中工艺参数对刻蚀速率及选择比的影响.GaN与Al0.27Ga0.73N之间的刻蚀选择比随自偏压的增大而减小,随感应耦合等离子体功率的增大变化不大.在Cl2/Ar为3:1的刻蚀气体中加入10%的O2对GaN刻蚀速率影响不大,却使Al0.27Ga0.73N刻蚀速率明显下降,从而提高了GaN与Al0.27Ga0.73N之间的刻蚀选择比.对比了采用不同自偏压刻蚀的Al0.27Ga0.73N材料肖特基的特性,发现反向漏电流随自偏压的增大而增大.A systematic study of etch rates and selectivities of GaN and Al0.27 Ga0.73 N at different processing terms is performed using CI~/Ar inductively coupled plasma. Selectivity between GaN and Al0.27 Ga0.73 N decreases with the increasing DC bias and changes a little with ICP power. Adding O2 （10%） to Cl2/Ar （3.. 1） gas mixture has little effect on etch rates of GaN, but leads to a great reduction in etch rates of Al0.27 Ga0.73 N, thus improving selectivity between GaN and Al0.27Ga0.73 N. Sehottky characteristics at different etching DC biases are contrasted, with the result that the leakage current increases with the enhanced DC bias.

关 键 词：感应耦合等离子体 刻蚀速率 选择性刻蚀 选择比 刻蚀损伤 

分 类 号：TN325.3[电子电信—物理电子学]