晶粒尺寸对CVD金刚石膜电学特性的影响  

Electrical properties of CVD diamond films with different grain sizes

作　　者：崔江涛[1] 王林军[1] 苏青峰[1] 阮建锋[1] 蒋丽雯[1] 史伟民[1] 夏义本[1] 

机构地区：[1]上海大学材料科学与工程学院,上海200072

出　　处：《功能材料与器件学报》2006年第4期275-279,共5页Journal of Functional Materials and Devices

基　　金：国家自然科学基金(No.60577040);上海应用材料研究与发展基金(No.0404);上海市纳米专项(No.0452nm051);上海市教育委员会"材料学"重点学科赞助上海市重点学科(T0101)资助

摘　　要：通过改变生长参数,采用热丝化学气相沉积(HFCVD)法制备了从10μm到90nm四种晶粒尺寸的金刚石膜,并制作了三明治结构的光电导探测器。采用原子力显微镜和拉曼光谱仪研究了薄膜的结构和表面形貌:表面粗糙度从423nm变化到15nm;晶粒越大,金刚石膜的质量越好。I-V特性测试结果表明随着晶粒尺寸的减小,金刚石膜的电阻率从1011Ω.cm减小到106Ω.cm。在5.9 keV的55Fe X射线辐照下,随着晶粒尺寸的减小,探测器的信噪比(SNR)呈减小趋势。Diamond films with different grain sizes were prepared using the bias -enhanced hot filament chemical vapor deposition （HFCVD） technique. Atomic force microscopy （AFM） analysis shows that the films are composed of small diamond particles with grain size ranging from - 10μm to -90nm and the roughness is from -423nm to -15nm. The I- V measurement results indicate that with reducing of the grain size, the resistivity of diamond films changes from 10^11Ω·cm cm to 10^6Ω·cm. 5.9 keV ^55Fe X - rays are used to investigate the photocurrent and signal - to - noise ratio of the detectors based on diamond films at room temperature. The above results indicate that diamond films with larger grain size are more suitable for being fabricated as semiconductor detectors.

关 键 词：金刚石膜 电学特性 晶粒尺寸 HFCVD 

分 类 号：O738[理学—晶体学]