微波功率SiGe HBT研究进展  

Progress in Microwave Power SiGe HBT's

作　　者：张万荣 张蔚[1] 金冬月[1] 谢红云[1] 肖盈[1] 王扬[1] 李佳[1] 沈佩[1] 

机构地区：[1]北京工业大学电子信息与控制工程学院,北京100022

出　　处：《微电子学》2006年第5期548-551,共4页Microelectronics

基　　金：国家自然科学基金资助项目(60376033);北京市优秀跨世纪人才基金资助项目(67002013200301);模拟集成电路国家重点实验室基金资助项目(51439010804QT0101);北京市教委项目;北京市属市管高校中青年骨干教师培养计划资助项目

摘　　要：Si的热导率比大部分化合物半导体(如GaAs)的热导率高,SiGe HBT在一个较宽的温度范围内稳定,SiGe HBT的发射结电压VBE的温度系数dVBE/dT比Si的小,双异质结SiGe HBT本身具有热-电耦合自调能力,所加镇流电阻可以较小,所有这些使SiGe HBT比GaAs HBT和SiBJT在功率处理能力上占一定优势。文章对微波功率SiGe HBT一些重要方面的国内外研究进展进行评述,希望对从事微波功率SiGe HBT的研究者有所帮助。The thermal conductivity of Si is larger than that of most III-V compound semiconductors. SiGe HBTs are stable within a wide temperature range. The temperature coefficient of emitter junction voltage dVBE/dT in SiGe HBTs is smaller than that in Si. Double heterojunction SiGe HBTs have self-adjustability of electrothermal coupling, and the ballast resistance added in SiGe HBTs can be smaller than that in Si BJTs and GaAs HBTs. All these features make SiGe HBTs superior over GaAs HBTs and Si BJTs in power handling capability. Progresses in the research of some important aspects of microwave power SiGe HBTs are reviewed, which may serve as a reference for researchers in this field.

关 键 词：SIGE/SI 异质结晶体管 微波功率器件 

分 类 号：TN322.8[电子电信—物理电子学]