一种具有高电流增益的平面集成SiGe HBT  

A Planar Integration SiGe HBT with High Current Gain

作　　者：赵安邦[1] 谭开洲[1] 吴国增[1] 李荣强[1] 张静[2] 钟怡[2] 刘道广[2] 

机构地区：[1]重庆邮电大学,重庆400065 [2]模拟集成电路国家重点实验室中国电子科技集团公司第二十四研究所,重庆400060

出　　处：《微电子学》2006年第5期576-579,583,共5页Microelectronics

摘　　要：研制了一种平面集成多晶发射极SiGe HBT。经测量,在室温下电流增益β大于1 500,最大达到2 800,其Vceo为5 V,厄利(Early)电压VA大于10 V,βVA乘积达到15 000以上。这种器件对多晶硅发射极砷杂质浓度分布十分敏感。A planar integration SiGe HBT with polysilicon emitter is fabricated, which has a current gain greater than 1 500 at room temperature and even up to 2 800 at its maximum. Its Vceo is 5 V and Early voltage is greater than 10 V, and the βVA product exceeds 15 000. This HBT is very sensitive to As distribution in the polysilicon emitter region.

关 键 词：SIGE 异质结双极晶体管 平面集成 多晶硅发射极 

分 类 号：TN322.8[电子电信—物理电子学]