N、O、Ga、Mg和Si离子注入n型GaN样品的光致发光谱中蓝光发射带的研究  

Studies on blue band in photoluminescence spectra of n-GaN implanted by different ions:N,O,Ga,Mg and Si

作　　者：张小东[1] 李公平[1] 张利民[1] 尤伟[1] 张宇[1] 刘正民[1] 林德旭[2] 

机构地区：[1]兰州大学现代物理系,兰州730000 [2]中国科学院高能物理研究所,北京100049

出　　处：《核技术》2006年第11期835-837,共3页Nuclear Techniques

摘　　要：采用光致发光手段研究了几种不同注入离子N、O、Mg、Si和Ga对n型GaN蓝光发射带的影响。其中离子的注入剂量分别为1013、1014、1015和1016cm-2,注入温度为室温。注入后的样品在900℃流动氮气环境下进行10min的热退火。通过对实验测得的光致发光谱的分析,给出了不同注入离子对n型GaN蓝光发射带的影响随注入剂量的变化关系以及该影响的相对强弱,进而确定蓝光发射起源于注入离子引入的间位缺陷。The n-type gallium nitride （GaN） films were implanted with oxygen, nitrogen, magnesium, silicon and gallium ions at room temperature to a dose range from 10^13 to 10^16 cm^-2. All the implanted GaN samples were annealed at 900℃ for 10 min in a flowing nitrogen environment. The effects of the implanted ion species on the blue luminescence （BL）band of GaN material were investigated by the photoluminescence （PL） spectra taken at room temperature. And based on the experimental data, we can conclude that the BL band result from the transitions between the energy levels formed by the interstitial impurities in the band gap of GaN.

关 键 词：氮化镓 光致发光谱 离子注入 

分 类 号：O472.3[理学—半导体物理]