SiGe／Si异质结构MOS器件栅介质技术研究  

Study on Gate Insulator Preparation for SiGe/Si Heterostructure MOS Devices Application

作　　者：亓文杰[1] 於伟峰[1] 李炳宗[1] 顾志光[1] 黄维宁[1] 姜国宝[1] 张翔九[1] 

机构地区：[1]复旦大学电子工程系,复旦大学表面物理实验室

出　　处：《Journal of Semiconductors》1996年第11期858-862,共5页半导体学报（英文版）

基　　金：国家自然科学基金

摘　　要：本文研究ＳｉＧｅ／Ｓｉ异质结构ＭＯＳ器件栅介质制备技术，采用等离子体增强化学汽相淀积（ＰＥＣＶＤ）方法低温制备电学特性优良的薄栅介质薄膜，并应用于ＳｉＧｅ／Ｓｉ异质结构器件研制，试制成功ＳｉＧｅ／Ｓｉ异质结构ＰＭＯＳ和ＮＭＯＳ实验性器件．Abstract The gate insulator preparation technology for SiGe/Si heterostructure MOS devices application has been studied in this paper. Plasma Enhanced Chemical Vapor Deposition(PECVD) has been employed to prepare the thin gate insulator with good electrical properties at low temperature. This technology has been incorporated into the development of SiGe/Si MOS devices and the SiGe/Si PMOS & NMOS transistors with good output characteristics have successfully been fabricated.

关 键 词：MOS器件 栅介质 SIGE 硅 异质结构 

分 类 号：TN386.1[电子电信—物理电子学]