Delta掺杂制备p-GaN薄膜及其电性能研究  

Studies on electrical properties of delta-doping p-GaN films

作　　者：李彤[1] 王怀兵[1] 刘建平[1] 牛南辉[1] 张念国[1] 邢艳辉[1] 韩军[1] 刘莹[1] 高国[1] 沈光地[1] 

机构地区：[1]北京工业大学北京市光电子技术实验室,北京100022

出　　处：《物理学报》2007年第2期1036-1040,共5页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:60506012);北京市教委重点项目(批准号:KZ200510005003)资助的课题~~

摘　　要：采用Delta掺杂技术制备了p型氮化镓薄膜,并利用原子力显微镜、霍尔测试、X射线衍射、荧光光谱等测试手段对样品的形貌和电导性能进行了分析,发现Delta掺杂样品比均匀掺杂样品晶体质量和电导性能都有很大提高,说明Delta掺杂可有效抑制缺陷,并对缺陷抑制机理进行了讨论;最后,对掺杂前的预通氨过程作了深入的研究,结果发现,预通氨对掺杂不益.Mg delta-doped GaN epilayers have been grown by metalorganic chemical vapor deposition, and their characteristics have been investigated. It is shown that not only the p-type conduction, but also the overall quality of p-GaN is improved by delladoping, it is observed that the dislocation density is reduced due to the growth interruption. A pre-purge step has been employed during delta-doping process, but the cartier concentration was decreased by the pre-purge.

关 键 词：氮化镓 LEDS MOCVD Delta掺杂 

分 类 号：O484.42[理学—固体物理]