低压MOCVD外延生长InGaAsP／InP应变量子阱材料与器件应用  

InGaAsP/InP Strained Layer Quantum Well Materials Grown by LP-MOCVD and Their Device Applications

作　　者：马骁宇[1] 王树堂[1] 熊飞克[1] 郭良[1] 王仲明[1] 曾靖[1] 王丽明[1] 陈良惠[1] 

机构地区：[1]中国科学院半导体研究所

出　　处：《Journal of Semiconductors》1996年第5期396-400,共5页半导体学报（英文版）

基　　金：国家"863"重大项目

摘　　要：本文报道用低压有机金属化合物化学气相淀积（ＬＰ－ＭＯＣＶＤ）外延生长ＩｎＧａＡｓＰ／ＩｎＰ应变量子阶材料，材料参数与外延条件的关系，量子阱器件的结构设计及其器件应用．用所生长的材料研制出宽接触阈值电流密度小于４００Ａ／ｃｍ２（腔长４００μｍ），ＤＣ－ＰＢＨ结构阈值７～１２ｍＡ的１．３μｍ量子阱激光器和宽接触阈值电流密度小于６００Ａ／ｃｍ２（腔长４００μｍ），ＤＣ－ＰＢＨ结构阈值９～１５ｍＡ的１．５５μｍ量子阶激光器以及高功率１．３μｍ量子阱发光二极管和ＩｎＧａＡｓＰＩＮ光电探测器．Abstract InGaAsP/InP strained layer quantum well (SL-QW) materials grown by low pressure metal organic chemical vapour deposition (LP-MOCVD) are reported. The telationship between the material parameters and the epitaxial conditions, the structural design of quantum well device and its applications are given in this paper. 1. 3μm SL-QW laser and 1. 55μm SL-QW lasers with broad area threshold current densities as low as 400A/cm2 and 600A/cm2(at cavity length 400pm), DC-PBH stripe device threshold current 7￣ 12mA and 9￣ 15mA were obtained, respectively. High power 1. 3μm QW light emitting diodes (LED), and InGaAs PIN photodetectors with high performace were also obtained by LP-MOCVD epitaxial materials.

关 键 词：MOCVD 外延生长 INGAASP INP 应变量子阱材料 

分 类 号：TN304.054[电子电信—物理电子学]