InP衬底AlAs/In_(0.53)Ga_(0.47)As RTD的研制  

Research on InP-Based AlAs/In_(0.53)Ga_(0.47)As RTD

作　　者：高金环[1] 杨瑞霞[2] 武一宾[1] 刘岳巍[3] 商耀辉[1] 杨克武[1] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051 [2]河北工业大学信息工程学院,天津300130 [3]石家庄铁道学院电气分院,石家庄050051

出　　处：《Journal of Semiconductors》2007年第4期573-575,共3页半导体学报（英文版）

摘　　要：报道了InP衬底AlAs/In0.53Ga0.47As/AlAs两垒一阱结构共振隧穿二极管(RTD)器件的研制.结构材料由分子束外延制备,衬底片为(001)半绝缘InP单晶片,器件制作选用台面结构.测得室温下的峰值电流密度为1.06×105A/cm2,峰-谷电流比为7.4,是国内报道的首例InP材料体系RTD器件.The research and fabrication of an InP-based AlAs/In0.53 Ga0.47As double barrier single well resonant tunneling diode （RTD） device are reported. The material structure was grown off （001） semi-induction InP wafer by molecular beam epitaxy, and the device was fabricated with a mesa structure. The DC characteristics for the RTD sample were measured at room temperature. The peak-to-valley current ratio was 7.4, and the peak current density JP was 1.06 × 10^2 A/cm^2 .

关 键 词：共振隧穿二极管 分子束外延 台面结构 INP衬底 峰-谷电流比 

分 类 号：TN312.2[电子电信—物理电子学]