GaN FP-HEMTs中击穿电压与电流崩塌的关系  

Relation between breakdown voltage and current collapse in GaN FP-HEMTs

作　　者：郭亮良[1] 冯倩[1] 马香柏[1] 郝跃[1] 刘杰[1] 

机构地区：[1]西安电子科技大学微电子研究所,宽禁带半导体材料与器件教育部重点实验室,西安710071

出　　处：《物理学报》2007年第5期2900-2904,共5页Acta Physica Sinica

基　　金：国家重大基础研究发展计划(973)(批准号:51327020301;2002CB311904);西安应用材料创新基金(批准号:XA-AM-200616)资助的课题~~

摘　　要：研究了钝化在抑制电流崩塌的同时,会引起HEMT器件击穿电压的下降.而采用场板结构的AlGaN/GaN场板HEMT器件(FP-HEMT)的击穿电压从46V提高到了148V,表明了场板对提高击穿电压有显著作用(3倍以上).接着,比较了FP-HEMT器件与常规HEMT器件,钝化后HEMT器件在应力前后的电流崩塌程度,得出了采用场板结构比之钝化对器件抑制电流崩塌有更明显作用的结论.从理论上和实验上都表明,采用场板结构能够很好解决提高击穿电压与抑制电流崩塌之间的矛盾.Passivation is generally used to suppress the current collapse, however, it also cause the decrease in breakdown voltage. By incorporating a field plate, the breakdown voltage was enhances from 46 to 148 V as tested using the drain current inject technology （DCIT）, which indicates that the field plate can increase the breakdown voltage remarkablely. Then, comparisons between the degrees of current collapse in the conventional HEMTs, the HEMTs after passivation and FP-HEMTs indicate that the field plate performs better in suppressing current collapse than passivation. It is conclusded that adopting the field plate structure is a good solution to the problem of incresing the breakdown voltage and at the same time suppressing the current collapse in GaN HEMTs.

关 键 词：GAN 场板 击穿电压 电流崩塌 

分 类 号：O472.4[理学—半导体物理]