AlGaN/GaN HEMT击穿特性与受主陷阱相关性研究  

Investigation on the Breakdown Character of AlGaN/GaN HEMT with Acceptor Trap

作　　者：严地[1] 罗谦[1] 卢盛辉[1] 靳翀[1] 罗大为[1] 周伟[1] 杨谟华[1] 

机构地区：[1]电子科技大学微电子学与固体电子学学院,成都610054

出　　处：《半导体技术》2007年第3期226-229,共4页Semiconductor Technology

基　　金：国家自然科学基金资助项目(60576007)

摘　　要：通过计算沟道电场的分布,研究了受主陷阱对AlGaN/GaN HEMT器件击穿特性的影响。研究发现,有受主陷阱的条件下,漏端出现电场峰值,栅端电场峰值被大幅度削减。当Vg=0 V,Vd=60 V,受主陷阱浓度NA=1×1017cm-3时,栅端电场峰值与不加受主陷阱时相比可下降到56%。受陷阱电荷影响,当击穿电压大于某个电压时,漏端电场峰值超过栅端电场峰值,此时,击穿发生在漏端。该仿真结果修正了HEMT击穿总发生在栅端边缘处的传统看法。The effects of acceptor trap on the breakdown character of AlGaN/GaN HEMT were investigated through evaluated electric field distribution in the channel. It is shown that the electrical field peak rises at the drain edge while it falls at the gate edge. With the acceptor trap, the electrical field peak at the gate edge is reduced to 56% while Vs =0 V, Vd =60 V and NA = 1 × 10^17 cm^-3.When breakdown voltage goes beyond a certain voltage, affected by acceptor traps, the electrical field peak at the drain edge will exceed that at the gate edge, and the breakdown will occur in the neighborhood of the drain edge.

关 键 词：铝镓氮 氮化镓 高电子迁移率晶体管 电场 受主陷阱 

分 类 号：TN304.23[电子电信—物理电子学] TN386