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作 者:曹冰[1] 何晓雄[1] 李合琴[2] 顾金宝[2] 赵之明[2] 刘炳龙[1]
机构地区:[1]合肥工业大学理学院,安徽合肥230009 [2]合肥工业大学材料科学与工程学院,安徽合肥230009
出 处:《真空与低温》2007年第2期81-84,119,共5页Vacuum and Cryogenics
基 金:安徽省自然科学基金(03044703)资助
摘 要:采用了一种新型工艺制备ZnO薄膜。新工艺采用二步法,首先在N型Si(100)衬底上用离子束沉积溅射一层金属Zn膜,然后通过热氧化金属Zn膜制备ZnO薄膜。通过X射线衍射、原子力显微镜对不同制备工艺下的ZnO薄膜进行结构与形貌的分析比较。研究表明,Zn膜的离子束溅射沉积时间、热氧化时间和辅助枪的离子束对热氧化后的ZnO薄膜再轰击处理对ZnO薄膜的结构与形貌都会产生影响。ZnO thin films were prepared by a new process thah includes two steps. Firstly, metallic Zn films were deposited by ion beam on Si (100) substrate. Secondly, ZnO thin films were fabricated by thermal oxidation of metallic Zn films. The structure and morphology of ZnO thin films were investigated and compared by XRD and AFM. The results show that the crystal orientation, roughness and dimension of the ZnO thin films are effected by the sputtering conditions of Zn films and thermal oxidation. After ZnO thin film was sputtered by ion beam again, its crystal orientation, roughness were changed too.
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