p-GaN ICP刻蚀损伤研究  

Study on ICP Etching Induced Damage in p-GaN

作　　者：龚欣[1] 吕玲[1] 郝跃[1] 李培咸[1] 周小伟[1] 陈海峰[1] 

机构地区：[1]西安电子科技大学微电子学院,宽禁带半导体材料与器件教育部重点实验室,西安710071

出　　处：《Journal of Semiconductors》2007年第7期1097-1103,共7页半导体学报（英文版）

基　　金：国家重大基础研究发展规划资助项目(批准号:51327020301)~~

摘　　要：运用Cl2/N2等离子体系统,系统研究了ICP刻蚀中ICP功率、RF功率、反应室压力和Cl2百分比对p型GaN材料的物理表面形貌和欧姆接触特性的影响.原子力显微镜显示,在文中所用的刻蚀条件范围内,刻蚀并没有引起表面形貌较大的变化,刻蚀表面的均方根粗糙度在1.2nm以下.结果还显示,已刻蚀p-GaN材料的电特性与物理表面形貌没有直观联系,刻蚀后欧姆接触特性变差更多地是因为刻蚀中浅施主能级的引入,使表面附近空穴浓度降低所致.The plasma-induced damage for p-GaN by inductively coupled plasma（ICP） etching with Cl2/N2 gas chemistry was studied. Effects of ICP power,RF power,chamber pressure, and Cl2 percentage on the physical and electrical characteristics of p-GaN were investigated. The results show that the surface roughness is relatively independent of these etching conditions and shows fairly smooth morphology （RMS〈1. 2nm） ;the surface morphology has no direct effect on the electrical characteristics of p-GaN,and the deterioration of ohmic contact to the etched p-GaN is due to a decrease in hole concentration in the near-surface region through the creation of shallow donor states rather than surface roughening.

关 键 词：GAN 感应耦合等离子体刻蚀 等离子体损伤 

分 类 号：TN304.05[电子电信—物理电子学]