先进的Hf基高k栅介质研究进展  

Development of Advanced Hf Based High-k Gate Dielectrics

作　　者：许高博[1] 徐秋霞[1] 

机构地区：[1]中国科学院微电子研究所,北京100029

出　　处：《电子器件》2007年第4期1194-1199,共6页Chinese Journal of Electron Devices

基　　金：国家重点基础研究发展计划资助项目(2006CB302704);国家自然科学基金资助项目(60576032)

摘　　要：随着CMOS器件特征尺寸的不断缩小,SiO2作为栅介质材料已不能满足集成电路技术高速发展的需求,利用高k栅介质取代SiO2栅介质成为微电子技术发展的必然.但是,被认为最有希望替代SiO2的HfO2由于结晶温度低等缺点,很难集成于现有的CMOS工艺中,新型Hf基高k栅介质的研究成为当务之急.据报道,在HfO2中引入N、Si、Al和Ta可大大改善其热力学稳定性,由此形成的高k栅介质具有优良的电学特性,基本上满足器件的要求.本文综述了这类先进的Hf基高k栅介质材料的最新研究进展.With the feature size of CMOS device scaling down, Silicon dioxide as gate dielectric material will not meet the requirements of the future advanced integrated circuit technology. So, it is necessary to use high-k gate dielectric to replace conventional SiO2 gate dielectric. HfO2 has been regarded as the most prospective one to replace silicon dioxide. But, it is difficult to integrate it into the existing CMOS process owing to its shortcoming, such as low crystallization temperature and so on. New Hf based high-k gate dielectrics should be studied. It is reported that incorporation of N, Si, Al and Ta into HfO2 can improve its thermal stability and the new high-k gate dielectrics formed have quite improved electronic characteristics meeting the requirements of the future advanced CMOS device. This paper provides a brief view of the latest development of advanced Hf based high-k gate dielectrics.

关 键 词：高介电常数 HFO2 HFON HFSION HfTaON 

分 类 号：TN401[电子电信—微电子学与固体电子学]