高温压力传感器用多晶硅-AlN-硅单晶基片  

Substrates of Nano-polycrystal Silicon-AlN Insulated Film-silicon Mono Crystal for Making High Temperature Pressure Sensor

作　　者：李辉[1] 孙以材[1] 潘国峰[1] 李金[1] 李鹏[1] 

机构地区：[1]河北工业大学信息工程学院,天津300130

出　　处：《仪表技术与传感器》2007年第5期7-10,共4页Instrument Technique and Sensor

摘　　要：论述纳米多晶硅-氮化铝隔膜-硅单晶衬底基片的研制。此基片可供制造高温力学量传感器。其要点是在力敏电阻条与硅弹性膜之间利用AlN进行绝缘隔离。AlN与硅的热膨胀系数接近,附着力高,耐击穿性好。又具有高化学稳定性,高热导率,对于压力传感器的电桥散热特别有利,可解决压力传感器启动时的零点时漂。由于无P-N结,力敏电阻无反向漏电,因此用此基片制造的力学量传感器的特性好(零点电漂移及热漂移小、非线性小)。力敏电阻条由纳米多晶硅构成。利用在600℃退火Al诱导晶化能使溅射得到的非晶硅转化成纳米多晶硅。Development for substrates of nano-polycrystal silicon-A1N insulated film-silicon mono crystal, for making high temperature pressure sensor,was presented in this paper.The essential is using A1N film to separate piezo-resistors from silicon elastic film.The expansion coefficient of A1N is close to that of silicon with a good stiffness and high break - down voltage as well as good chemical steady. It is benefit to thermal dissipation for bridge with its high thermal conductivity. That can solve the problem of drift of offset with time when starting and powering sensors.The properties （electric and thermal drift for offset, non-linearity） of force sensors fabricated by these substrates are particularly excellent, Piezo-resistors consist of nano-polycrystal silicon,which is made from sputtering amorphous silicon by A1 induced crystallization at temperature of 600 ℃.

关 键 词：多晶硅 氮化铝薄膜 高温压力传感器 直流磁控反应溅射 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置]