p型ZnO及ZnO基发光器件研究进展  

Research Progress in p-Type ZnO and ZnO-Based Electroluminescent Devices

作　　者：王建波[1] 李玉国[1] 张秋霞[1] 夏继周[2] 张月甫[1] 崔传文[1] 张敬尧[1] 

机构地区：[1]山东师范大学物理与电子科学学院半导体研究所,济南250014 [2]山东省青年管理干部学院,济南250014

出　　处：《微纳电子技术》2007年第9期857-862,共6页Micronanoelectronic Technology

摘　　要：六角纤锌矿结构ZnO是一种应用广泛的直接宽带隙(3.36 eV,300 K)半导体材料,其优异的光电、压电等性能使其成为近10年来全世界半导体研究的热点。综述了自1997年以来ZnO的p型掺杂以及ZnO基发光器件方面的研究成果,比较了不同方法制备的p型ZnO材料和发光器件的性能差异,分析了造成各种差异的原因,并针对当前研究提出了一些建议和预测。Wurtizitic ZnO is a direct wide-bandgap （3.36 eV at 300 K） semiconductor with many applications, whose best photoeleetronic and piezoelectric properties have gained itself substantial interest from all over the world for about ten years. Research progresses were reviewed in p-type doping and electroluminescent devices of ZnO since 1997, By comparing fabrication methods and characteristics of p-type ZnO and ZnO-based electroluminescent devices, possible reasons for those differences were analysed, and some proposals and predications were proposed.

关 键 词：半导体技术 P型掺杂 综述 ZNO薄膜 发光器件 

分 类 号：TN304.21[电子电信—物理电子学] TN312.8