n型4H-SiC同质外延层上欧姆接触的研究  

Study of Ohmic Contact on n-Type 4H-SiC Homoepitaxy

作　　者：田爱华[1] 赵彤[1] 潘宏菽[1] 陈昊[1] 李亮[1] 霍玉柱[1] 

机构地区：[1]河北半导体研究所,石家庄050051

出　　处：《半导体技术》2007年第10期867-870,共4页Semiconductor Technology

基　　金：国家重点基础研究发展规划项目(2002CB311904)

摘　　要：介绍了n+-SiC/Ti/Pt欧姆接触的制备方法及其接触特性,其中n+-SiC外延层是通过化学气相淀积的方法在偏离(0001)方向7.86°的4H-SiC衬底上进行同质外延生长所得。对于n+-SiC/Ti/Pt接触系统,通过合金实验得到最优的欧姆接触制备条件,得到最小的比接触电阻为2.59×10-6Ω.cm2,满足器件性能,为各种SiC器件的实现奠定了基础。同时,该接触系统还具有很好的高温稳定性,在100 h的400℃高温存储实验后,其比接触电阻基本稳定。　The fabrication and electrical characteristics of n^＋-SiC/Ti/Pt contact were presented,in which the n^＋-SiC epilayer was grown on 7.86°off-axis 4H-SiC substrate by chemical vapor deposition（CVD）.The best result obtained for specific contact resistivity is 2.59×10^-6Ω·cm^2,good enough for SiC device.The thermal stability of n^＋-SiC/Ti/Pt contact is very good.The contacts is proved to be stable during ageing at 400 ℃ for 100 h.

关 键 词：4H-SIC 同质外延 欧姆接触 比接触电阻 接触的高温稳定性 

分 类 号：TN304.24[电子电信—物理电子学] TN305.93