蓝宝石衬底上原子级光滑AlN外延层的MOCVD生长  

Epitaxial Growth of Atomically Flat AlN Layers on Sapphire Substrate by Metal Organic Chemical Vapor Deposition

作　　者：赵红[1] 邹泽亚[1] 赵文伯[1] 刘挺[1] 杨晓波[1] 廖秀英[1] 王振[1] 周勇[1] 刘万清[1] 

机构地区：[1]中国电子科技集团第四十四研究所,重庆400060

出　　处：《Journal of Semiconductors》2007年第10期1568-1573,共6页半导体学报（英文版）

摘　　要：在蓝宝石衬底表面无氮化、低Ⅴ/Ⅲ比的情况下,采用1200℃的衬底温度、5kPa反应室气压,用MOCVD方法在蓝宝石衬底上生长出了表面原子级光滑的AlN外延层.原子力显微镜测试表明其平均粗糙度为0.44nm,X射线衍射(0002)回摆曲线FWHM为166″.实验结果和分析表明,极性和气相反应是影响AlN表面形貌的主要原因.以原子级光滑的AlN为模板生长出了高质量的高Al组分的n型AlGaN,证实了AlN模板具有较好的质量.AlN layers were grown on sapphire substrate by metal organic chemical vapor deposition （MOCVD） at 1200℃, 5kPa. Atomically flat epilayers were obtained at a low Ⅴ/ Ⅲ flow ratio without nitridation on the substrate. Atomic force microscopy （AFM） reveals a roughness of around 0.44nm for the atomically flat layers with an FWHM of （0002） X-ray diffraction rocking curve around 166＂. Analysis of the growth results demonstrates that the polarity of the AlN layer and vapor phase reaction between NH3 and the Al-precursor are the primary factors affecting the AlN surface morphology. High quality n-doped AlGaN layers with high Al content were obtained using the as-grown atomically flat AlN layers,implying the good quality of the layers as epitaxial template.

关 键 词：MOCVD ALN 极性 原子级光滑 

分 类 号：TN304.05[电子电信—物理电子学]