S波段10W SiC MESFET的研制  

Development of S-Band SiC MESFET with 10W Output

作　　者：潘宏菽[1] 李亮[1] 陈昊[1] 齐国虎[1] 霍玉柱[1] 杨霏[1] 冯震[1] 蔡树军[1] 

机构地区：[1]河北半导体研究所,石家庄050051

出　　处：《半导体技术》2007年第11期940-943,共4页Semiconductor Technology

基　　金：国家重点实验室基金项目(9140C060702060C0603)

摘　　要：采用在75 mm 4H-SiC半绝缘衬底上实现的国产SiC MESFET外延材料进行器件研制,在该器件的具体研制工艺中利用感应耦合等离子体干法腐蚀,牺牲层氧化等工艺技术,研制出2 GHz工作频率下连续波输出功率大于10 W、功率增益大于9 dB、功率附加效率不低于35%的MESFET功率样管,该器件的特征频率达6.7 GHz,最高振荡频率达25 GHz。对芯片加工工艺和器件的测试技术进行了分析,给出了相应的工艺和测试结果。The SiC MESFET was developed with 10W of output power, power gain over 9 dB and 35% power added efficiency under continuous wave at 2 GHz. The 4H-SiC epitaxial wafer was prepared on 75 mm SiC semi-insulated substrate made by ourselves. The devices with fT = 6.7 GHz and fmax = 25 GHz were fabricated using inductively coupled plasma etching, sacrificial oxide treatment and other conventional tools. The results of chip process and the device test were given.

关 键 词：碳化硅 微波 功率器件 金属-半导体场效应晶体管 

分 类 号：TN385[电子电信—物理电子学]