对功率器件击穿电压的模拟优化  

Simulation of the Breakdown Voltage of Power Devices

作　　者：赵普社[1] 王因生[1] 傅义珠[1] 

机构地区：[1]南京电子器件研究所,南京210016

出　　处：《电子与封装》2007年第10期40-43,共4页Electronics & Packaging

摘　　要：文章分析了微波功率器件的特点及其对器件击穿电压的影响,并在此基础上通过采用扩散保护环和耗尽区腐蚀两种方法来提高器件的击穿电压。文中对两种方法的相关参数进行了模拟优化,最终在浓度和厚度分别为9×1015cm-3和3μm的外延材料上制作出击穿电压为55V的C波段20W功率器件。In this paper, the characteristic of the microwave power device and its influence on the breakdown voltage are analyzed. Based on this analysis, the methods of Diffused Guard Ring and Depletion Etching are used to raise the breakdown voltage. Finally, by calculating correlated parameters, we make a C-band 20W power transistor with breakdown voltage of 55V on a substrate whose density and thickness are 9 × 10^15cm^-3 and 3 μm.

关 键 词：硅功率器件 击穿电压 扩散保护环 耗尽区腐蚀 

分 类 号：TN385[电子电信—物理电子学]