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作 者:王淑占[1] 李合琴[1] 赵之明[1] 巫邵波[1] 顾金宝[1] 宋泽润[2]
机构地区:[1]合肥工业大学材料科学与工程学院,安徽合肥230009 [2]中国电子科技集团公司43研究所,安徽合肥230022
出 处:《真空与低温》2007年第3期138-141,共4页Vacuum and Cryogenics
基 金:安徽省自然科学基金(03044703);安徽省红外与低温等离子体重点实验室资助
摘 要:采用直流与射频磁控溅射技术,用高纯石墨在单晶硅(100)表面制备了类金刚石薄膜(DLC)。采用拉曼光谱、扫描电镜分析了薄膜的结构、表面和截面形貌,以及与溅射工艺的关系,并且对溅射过程中粒子输运机理进行了解释。结果表明,2种溅射方法制备的薄膜均含有相当的sp3杂化碳原子。射频磁控溅射沉积的DLC薄膜所含sp3杂化碳原子的量要高于直流磁控溅射沉积的DLC薄膜,且薄膜质量优于直流磁控溅射沉积的DLC薄膜。Diamond like carbon films (DLC) were deposited on Si (100) substrates by high-purity graphite using direct current (DC) magnetron sputtering and radio frequency (RF) magnetron sputtering method. Microstructure, surface and sectional morphologies were investigated by Raman spectroscopy and SEM. Ttheir relations with sputtering parameter were studied too. The particle transportation mechanism during sputtering was explained. The results show that the films prepared by two sputtering ways have condign sp^3 bond. The content of sp&3 bonds in RF-DLC is higher than that in DC-DLC. The quality and surface roughness of RF-DLC films are better than that of DC-DLC films.
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