Au/n-ZnO/p-SiC紫外探测器的研制和特性分析  

Fabrication and analysis of Au/n-ZnO/p-SiC UV detectors

作　　者：何广宏[1] 谢家纯[1] 郭俊福[1] 李雪白[1] 钟声[1] 林碧霞[1] 傅竹西[1] 

机构地区：[1]中国科学技术大学物理系,安徽合肥230026

出　　处：《中国科学技术大学学报》2007年第11期1399-1402,共4页JUSTC

基　　金：国家自然基金重点项目(50532070);国家自然基金(50472009;10474091)资助.

摘　　要：采用宽禁带半导体n-ZnO和金属Au作肖特基接触,n-ZnO和同为宽禁带半导体p-SiC形成异质结,Ti,Ni,Ag合金作背底形成欧姆接触,研制出Au/n-ZnO/p-SiC结构的紫外探测器.测试分析了该器件的光谱响应特性,响应范围为200～400nm,在室温和一定反偏压下,响应峰值为313nm,半宽为65nm.同时测试分析了该器件的I-V特性,室温下,反向工作电压大于5V,反向击穿电压为70V.实验表明,此结构紫外探测器具有良好的紫外响应特性以及较低的反向漏电流和结电容.With wide band semiconductor n-ZnO and metal Au used to form Schottky contact, with n-ZnO and wide band semiconductor p-4H-SiC used to form heterojunction, and with alloys Ti, Ni and Ag used to form ohmic contact on the back, Au/n-ZnO/p-SiC UV detectors were fabricated. The spectrum response characteristics of the devices were measured and analyzed. The response wavelength range is from 200 nm to 400 nm. At room temperature and a certain reverse biased voltage, the response peak has been found at 313 nm and the half width of response wavelength at 65 nm. The IV characteristic has also been measured. At room temperature, the reverse working voltage is greater than 5 V, and the reverse breakdown voltage is 70 V. The measurement results show that Au/n-ZnO/p-SiC UV detectors have excellent UV response characteristics and lower leakage current and lower capacitance.

关 键 词：宽禁带 氧化锌 碳化硅 肖特基 异质结 光谱响应 紫外探测 

分 类 号：TN03[电子电信—物理电子学]