5W Si衬底GaN基HEMT研究  

Study of 5 W GaN-Based HEMT on Silicon Substrates

作　　者：刘晨晖[1] 冯震[1] 王勇[1] 冯志宏[1] 默江辉[1] 蔡树军[1] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2008年第1期62-64,共3页Semiconductor Technology

摘　　要：介绍了Si衬底上外延生长GaN基HEMT的制备及其直流特性与微波特性的研究结果:栅宽200μm器件Vgs=0 V时饱和电流密度达0.975 A/mm,最大跨导240 mS/mm,夹断电压-4.5 V,栅漏击穿电压80 V;栅宽1 mm器件,在频率2 GHz下,工作电压Vds=25 V时,连续波输出功率为5.0 W,功率增益为9 dB,功率附加效率为35%。GaN-based HEMTS on Si substrates were fabricated, and the DC and microwave characteristics were introduced. The gate-drain breakdown voltage of 200 μm gate-width device is 80 V. The maximum drain current density of 0. 975 A/mm at a gate bias of 0 V and a common peak transconductance of 240 mS/mm were achieved. The pinch-off voltage was - 4.5 V. The device with lmm gate-width showes a continuous wave output power of 5.0 W （ Vds = 25 V） with a large signal gain of 9.0 dB and a power added efficiency of 35 % at 2 GHz.

关 键 词：硅衬底 微波特性 氮化镓基高电子迁移率晶体管 

分 类 号：TN325.2[电子电信—物理电子学]