电离辐射中SOI MOSFETs的背栅异常kink效应研究  

A Novel Back-Gate Kink Effect in SOI MOSFETs During Ionizing Irradiation

作　　者：刘洁[1] 周继承[1] 罗宏伟[2] 孔学东[2] 恩云飞[2] 师谦[2] 何玉娟[2] 林丽[2] 

机构地区：[1]中南大学物理科学与技术学院,长沙410083 [2]电子元器件可靠性物理及其应用技术国家级重点实验室,广州510610

出　　处：《Journal of Semiconductors》2008年第1期149-152,共4页半导体学报（英文版）

基　　金：实验室基金项目(批准号:9140C0306010604);重点基金项目(批准号:A1220060979)资助项目~~

摘　　要：采用10keVX射线研究了部分耗尽SOIMOSFETs的总剂量辐射效应.实验结果显示,在整个辐射剂量范围内,前栅特性保持良好;而nMOSFET和pMOSFET的背栅对数Id-Vg2曲线中同时出现了异常kink效应.分析表明电离辐射在埋氧/顶层硅(BOX/SOI)界面处产生的界面态陷阱是导致异常kink效应产生的原因.基于MEDICI的二维器件模拟结果进一步验证了这个结论.Total dose irradiation effects of partially depleted SO1 MOSFETs are studied under 10keV X-ray exposure. Results show that the front-gate characteristics do not change significantly during irradiation. An anomalous kink is observed in the back-gate loga- rithmic curve of both nMOS and pMOS, which is attributed to charged traps at the buried oxide/top silicon （BOX/SOD interface during irradiation. Two-dimensional numerical simulation using MEDICI supports this conclusion.

关 键 词：X射线 SOI MOSFETS 部分耗尽 KINK效应 总剂量效应 

分 类 号：TN386[电子电信—物理电子学]