二十四所半导体工艺技术发展历程与展望  

Development and Prospect of SISC's Semiconductor IC Technology

作　　者：何开全[1] 王志宽[2] 钟怡[1] 

机构地区：[1]模拟集成电路国家级重点实验室 [2]中国电子科技集团公司第二十四研究所,重庆400060

出　　处：《微电子学》2008年第1期17-22,共6页Microelectronics

摘　　要：回顾了中电科技集团公司第二十四研究所自建所以来的半导体集成电路工艺发展历程。晶圆尺寸从1.5吋(40 mm)到6吋(150 mm),特征线宽从10μm到0.5μm,器件特征频率从低频到射频,工作电压从5 V到800 V,包括射频和高压大功率的各种器件。从研制成功全国第一块大规模集成电路至今,二十四所作为全国唯一的模拟集成电路专业研究所,在各个领域均取得了突出的成就,见证了中国半导体集成电路事业的发展历程。最后,展望了二十四所模拟及专用集成电路工艺技术的发展前景。Development course of SISC＇s semiconductor IC technology since its establishment in 1968 is reviewed. The wafer size evolved from 40 mm to 150 mm, and the critical dimension decreased from 10 μm to 0. 5 μm. The device frequency has increased from kilo Herts to RF, and the supply voltage has gone up from 5 V to over 800 V. Since the development of China＇s first large scale integrated circuit, SISC, which is the only institute in China engaged in research and development of analog IC＇s, has made outstanding achievements in various fields. The road- map of SISC＇s analog and ASIC technology is also presented.

关 键 词：半导体工艺 双极 互补双极 CMOS VDMOS BICMOS SOI 

分 类 号：TN304.05[电子电信—物理电子学]