PLD方法在CVD金刚石膜上生长ZnO薄膜及其特性研究  

Growth and properties of ZnO film on CVD diamond film by pulsed laser deposition

作　　者：张吉明[1] 廖源[1] 张五堂[2] 余庆选[2] 傅竹西[1] 

机构地区：[1]中国科学技术大学理化科学实验中心,安徽合肥230026 [2]中国科学技术大学物理系,安徽合肥230026

出　　处：《量子电子学报》2008年第2期240-245,共6页Chinese Journal of Quantum Electronics

基　　金：国家自然科学基金(50532070);安徽省自然科学基金(070412034)资助项目

摘　　要：采用脉冲激光沉积(PLD)技术,在(110)和(100)织构金刚石膜上成功制备出高度c-轴取向的ZnO薄膜,然后在纯氮气氛条件下对ZnO薄膜进行退火处理.作为比较。也在(100)Si上生长的ZnO薄膜进行了相同的处理.通过测量X射线衍射(XRD)谱和光致发光(PL)谱,研究了不同衬底性质和退火对薄膜结构和发光特性的影响.实验结果表明,在(100)织构金刚石上的ZnO膜具有最好的结晶质量,其半高宽只有0.2°.退火之后近紫外发光峰明显减弱的同时,绿色发光峰得到增强.这里归结为氮气退火后氧空位的增加,这点从退火后的XPS谱中可以得到进一步的确认.ZnO films were successfully deposited on the （110）, （100）-textured diamond films by pulsed laser deposition （PLD） method. Annealing treatments for as-deposited samples were also performed in nitrogen ambient. The effect of different substrates and annealing atmosphere on the structural and optical properties of the deposited films was investigated by means of X-ray diffraction （XRD） and photoluminescence （PL） measurements. The best crystal quality of ZnO film was obtained on the （100） orientation diamond film. After annealing in nitrogen ambient, the intensity of ultraviolet （UV） emission decreases greatly and the deep-level emission is enhanced. It is contributed to the introduction of a great deal of oxygen vacancies into ZnO films during the annealing process, which can be further confirmed by X-ray photoelectronic spectroscopy （XPS）.

关 键 词：材料 氧化锌薄膜 脉冲激光沉积法 金刚石 应力 

分 类 号：TN249[电子电信—物理电子学] O484[理学—固体物理]