GaN光导型紫外探测器  

Photoconductive GaN Ultraviolet Detector

作　　者：杨凯[1] 张荣[1] 臧岚[1] 沈波[1] 陈志忠[1] 陈鹏[1] 郑有[1] 黄振春 

机构地区：[1]南京大学物理系,南京210093

出　　处：《高技术通讯》1997年第9期26-28,共3页Chinese High Technology Letters

基　　金：国家教委跨世纪人才专项基金;国家自然科学基金

摘　　要：研究了以金属有机物化学气相沉积方法生长在6H－SiC衬底上的GaN光导型紫外探测器的光电流性质。通过光电流谱的测量，获得了GaN探测器在波长250nm-360nm范围近于平坦的光电流响应，并且观察到在365nm（～3．4eV）带边附近陡峭的截止边。测得GaN探测器在5V偏压下在360nm波长处的光电流响应度为133A／W，并得到了其响应度与外加偏压的关系。通过拟合光电流信号强度与入射光调制频率的实验数据，获得了GaN探测器的响应时间。The photocurrent properties of the conductive GaN ultraviolet detector grown on 6H-SiC substrate by metalorganic chemical vapor deposition are investigated. The detectable energy span of the detector up to ultraviolet is obtained by photocurrent measurement. The spectral responsivity remains nearly constant for wavelength from 250nm to 360nm, and a long-wavelength cutoff at 365nm(～3. 4eV) is observed. The detector responsivity is measured as 133A/W at a wavelength of 360urn under a 5-V bias, and the voltage-dependent responsivity is performed. Based on the relationship between the intensity of photocurrent and modulation frequency, the response time of the detector is determined by fitting the experimental data.

关 键 词：紫外探测器 氮化镓 光导型 MOCVD 

分 类 号：TN304.23[电子电信—物理电子学] TN23