X波段GaN HEMT内匹配器件  

X-Band Internally-Matched GaN HEMTs

作　　者：王勇[1] 李静强[1] 张志国[1] 冯震[1] 宋建博[1] 冯志红[1] 蔡树军[1] 杨克武[1] 

机构地区：[1]专用集成电路国家重点实验室

出　　处：《Journal of Semiconductors》2008年第9期1783-1785,共3页半导体学报（英文版）

摘　　要：自主研制的GaN HEMT,栅源泄漏电流从10-4A量级减小到了10-6A量级,有效提高了栅漏击穿电压,改善了器件工作特性.采用MIS结构制作了2.5mm栅宽GaN HEMT,测试频率为8GHz,漏源电压为33V时,器件连续波输出功率为18.2W,功率增益为7.6dB,峰值功率附加效率为43.0%.2.5mm×4GaN HEMT内匹配器件,测试频率8GHz,连续波输出功率64.5W,功率增益7.2dB,功率附加效率39%.With a self-developed GaN HEMT, the magnitude of leakage current between gate and drain is reduced to 10^-6A, the breakdown voltage is increased effectively,and the operating characteristic is improved. An MIS-GaN HEMT with 2.5mm gate-width is fabricated. When the operation voltage is 33V, the resultant device delivers a saturation output power of 18.2W, a power gain of 7.6dB,and a peak power added efficiency of 43.0% at a frequency of 8GHz CW. The internally-matched GaN HEMTs with a total gate-width of 2.5mm × 4 deliver a saturation output power of 64.5W,a power gain of 7. 2dB, and a power added efficiency of 39% at a frequency of 8GHz CW.

关 键 词：GAN HEMT 内匹配 输出功率 功率增益 功率附加效率 

分 类 号：TN386[电子电信—物理电子学]