Si损伤缺陷分析与解决方案  

Si Damage Defect Analysis and Solving Methods

作　　者：陈武佳[1] 朱晨靓 程秀兰[1] 

机构地区：[1]上海交通大学微电子学院,上海200030 [2]中芯国际集成电路制造(上海)有限公司,上海201210

出　　处：《半导体技术》2008年第9期791-792,共2页Semiconductor Technology

摘　　要：在半导体制造工艺流程中，浅沟道隔离（STI）工艺环节中的Si损伤一直是个困扰的问题。由于Si损伤的存在，造成5％－10％的良率损失，同时，严重影响产品的可靠性。分析了Si损伤缺陷的形成机理，并通过合理的实验设计和分析，给出了具体的解决方案。通过工艺制程的改良，既解决了Si损伤缺陷，节省了晶圆加工的时间，也减少了表面尘粒粘污。这个新工艺已经在中芯国际8厂得到了验证，对产品的电性能没有影响，同时，产品的量率还提高了5％～10％，已正式投入使用。In the processes of VLSI, Si damage issue of STI （shallow trench isolation） loop is perplexed and caused 5% - 10% yield loss, and it has highly reliability concern. The formation mechanism of Si damage defects was analyzed, and by means of proper design and analyses of experiments the solutions to reduce the Si damage defects were provided. Through the improvement action, the Si damage defects were solved and device data were comparable with baseline, the process throughput was also improved, and the surface particle reduced. Yield improves 5% - 10%, at present, the solution is qualified in SMIC Fab 8 and is implemented in production.

关 键 词：半导体制造 浅沟道隔离 湿法刻蚀 硅损伤 

分 类 号：TN304.12[电子电信—物理电子学]