自缓释镍源的横向诱导晶化多晶硅薄膜晶体管  

Metal Induced Lateral Crystallization Poly-Si Thin Film Transistors of Self-Released Nickel Source

作　　者：刘召军[1] 孟志国[1] 赵淑云[2] 王文[2] 郭海成[2] 吴春亚[1] 熊绍珍[1] 

机构地区：[1]南开大学光电子器件与技术研究所,天津300071 [2]香港科技大学电子及计算机工程系

出　　处：《Journal of Semiconductors》2008年第10期2009-2013,共5页半导体学报（英文版）

基　　金：国家自然科学基金资助项目(批准号:60437030)~~

摘　　要：以镍硅合金靶作为溅射源,采用磁控溅射方法制备了一种自缓释镍源.控制合适的自缓释镍源的准备条件,以单一方向横向晶化条件对非晶硅薄膜进行再晶化,可以获得低残余镍含量、大晶粒、高薄膜质量的多晶硅.以此多晶硅为有源层进行了薄膜晶体管研究.制备的p型TFT器件具有良好的特性,可有效地减小漏电流,同时具有很好的均匀性和稳定性.Nickel-silicon alloy target is used as a source of sputtering;a new type of nickel source,called a self-released nickel source, is fabricated. Self-released nickel source can control the crystallization rate efficiently and the obtained poly-Si material has a low level of nickel residue and high quality, p-type thin film transistors are fabricated using this kind of poly-Si as active islands. They have good performance and lower leakage current.

关 键 词：金属诱导横向晶化 多晶硅薄膜 低温制备 退火处理 

分 类 号：TN321.5[电子电信—物理电子学]