InP中的深能级杂质与缺陷  

Deep Impurities and Defects in InP

作　　者：孙聂枫[1] 赵有文[2] 孙同年[1] 

机构地区：[1]中国电子科技集团公司第十三研究所专用集成电路国家重点实验室,石家庄050051 [2]中国科学院半导体研究所,北京100083

出　　处：《微纳电子技术》2008年第10期559-567,共9页Micronanoelectronic Technology

摘　　要：综述了近年来关于InP中深能级缺陷和杂质的研究工作。讨论了深能级杂质及缺陷对InP材料性能的重要影响;介绍了深能级瞬态谱(DLTS)、光致发光谱(PL)、热激电流谱(TSC)、正电子寿命谱(PAS)、正电子深能级瞬态谱(PDLTS)等几种研究深中心的方法在研究InP时的某些特点;综合深能级缺陷和电学性质的测试结果,证明了半绝缘InP单晶材料的电学性能、热稳定性、均匀性等与材料中一些深能级缺陷的含量密切相关;分析了对掺铁和非掺退火两种半绝缘InP材料中深能级缺陷对电学补偿的影响;评述了对InP中的一些深中心所取得的研究成果和半绝缘InP的形成机理。The recent research work in deep impurities and defects in InP crystal is reviewed. The important influences of deep impurities and defects on the InP crystals are discussed. Some specialities in the Hall effect, DLTS, PL, TSC, PAS, PDLTS and other studying methods on deep centers in InP crystal are introduced. By combining electrical and deep level defect measurement results, electrical property, thermal stability and electrical uniformity of semi-insulating InP single crystal are demonstrated to have close correlation with the contents of the deep level defects. The influence of deep level defects on the electrical compensation in as-grown Fe-doped and annealed undoped semi-insulating （SI） InP materials is analyzed. Some research results on deep centers in InP crystals and semi-insulating mechanisms of InP are reviewed.

关 键 词：磷化铟 深能级 杂质 缺陷 退火 电学补偿 半绝缘 晶体 

分 类 号：TN304.23[电子电信—物理电子学] O474[理学—半导体物理]