硅脉冲双极型微波功率管参数退化探索  

Study on the Parameter Degradation of Silicon Microwave Pulsed Power Transistor

作　　者：潘金辉[1,2] 来萍[2] 李斌[1] 廖超[1,2] 

机构地区：[1]华南理工大学电子与信息学院,广东广州510640 [2]工业和信息化部电子第五研究所,广东广州510610

出　　处：《电子产品可靠性与环境试验》2009年第1期28-31,共4页Electronic Product Reliability and Environmental Testing

基　　金：电子元器件可靠性物理及其应用技术国家级重点实验室基金项目(9140C030201060C0304)资助

摘　　要：首先提出了硅脉冲双极型微波功率晶体等在应用中会出现功率增益、饱和压降以及EB结反向击穿电压参数的退化现象,并对此进行了研究探索。测试了良品和失效品EB结的正向特性和C-V特性,通过比较分析两者的区别,从理论推导并得出了退化的一大原因是由于基区浓度值的减小以及浓度梯度降低的结论。分析表明,导致基区浓度发生变化的原因是器件长期工作在高温下而发生了杂质再扩散。The degradation of power gain, saturation voltage drop and reverse breakdown voltage of EB junction in the application of the silicon microwave pulsed power transistor was introduced, and the degradation phenomenon is the focus of the research. In this experiment, the forward characteristics and C-V characteristics of EB junction of both good products and defect products were tested. By comparing and analyzing their differences, we theoretically derived one of the most important reasons for the gradient in the base region. degradation the decrease of the concentration and concentration It is shown that the rediffusion of impurity occurred in the device operated at high temperature for a long time could cause the the base region.

关 键 词：微波功率晶体管 参数退化 功率增益 饱和压降 击穿电压 

分 类 号：TN323.4[电子电信—物理电子学]