离子注入缺陷局域掺杂的高效率硅pn结发光二极管  

Efficient Silicon Light-emitting pn Diode Prepared by Ion Implantation Locally-doped Defects

作　　者：杨阳[1] 孙甲明[1] 张俊杰[1] 张新霞[1] 刘海旭[1] W. Skorupa M. Helm 

机构地区：[1]南开大学物理学院,弱光非线性光子学教育部重点实验室(南开大学),天津300071 [2]Institute of lon Beam Physics and Materials Research,Forschungszentrum Dresden Rossendorf, P. O. Box 510119, Dresden D-01314, Germany

出　　处：《材料科学与工程学报》2009年第1期142-145,共4页Journal of Materials Science and Engineering

基　　金：“973计划”资助项目(2007CB613403);国家自然科学基金资助项目(60776036);教育部新世纪人才项目(NCET-07-0459)

摘　　要：本文将硼离子注入n型硅片制备出硅pn结发光二极管,系统研究了硼离子的注入剂量、能量、以及温度等条件对硅pn结电致发光效率的影响。随着注入的B原子浓度的提高,硅pn结二极管的电致发光效率显著增强,在B原子浓度接近2倍于退火温度下的固溶度时,室温下的电致发光效率达到最大值0.12%,比传统的硅pn结发光二极管增强了2-3个数量级。在低温电致发光光谱中,发现了两个来自局部掺杂缺陷的束缚激子发光峰。随着温度的升高,束缚激子的发光峰出现温度猝灭,束缚激子离化为自由电子和空穴,增加了硅带间自由激子复合的发光效率,从而使电致发光呈现随温度增加而增强的反常温度效应。Silicon pn diodes are prepared by boron ion implantation into Czochralski （CZ） n-type silicon substrate. The influences of the implanted boron dose, energy, and temperature on the electroluminescence （EL） efficiency of the silicon p-n junctions have been systematically studied. With increasing the boron dose, the EL efficiency of the silicon pn diode has been improved remarkably. Efficient EL with power efficiency up to 0.12 % is observed for boron concentrations of about twice the solubility limit at the annealing temperature, which are 2-3 orders of magnitude than that of traditional silicon pn diodes. The EL ＇spectra at low temperature exhibits two peaks from excitons bound to the boron implantation induced defects. With an increase of temperature, the two peaks are quenched by thermal dissociation of the bound excitons into free electrons and holes, which brings to an anomalous increase of the EL intensity from band to band free electron-hole recombination.

关 键 词：束缚激子 离子注入 硼 退火 调制掺杂 

分 类 号：O472.3[理学—半导体物理] O482.3[理学—物理]