SOI器件的增强短沟道效应模型  

Enhancive Short Channel Effect Model for SOI Device

作　　者：卜建辉[1] 刘梦新[1] 胡爱斌[1] 韩郑生[1] 

机构地区：[1]中国科学院微电子研究所,北京100029

出　　处：《半导体技术》2009年第6期560-562,共3页Semiconductor Technology

摘　　要：为了探索SOI器件总剂量辐照后阈值电压漂移量和沟道长度的关系,利用器件模拟软件ISETCAD,对不同沟道长度的PDSOI NMOS管进行了总剂量辐照模拟。模拟结果表明,随着沟道长度的减小,背沟道MOS管阈值电压漂移越来越大,并且漂移量和辐照偏置密切相关,称此效应为SOI器件的增强短沟道效应。以短沟道效应理论为基础对此效应的机理进行了解释,并以短沟道效应模型为基础对此效应提出了一个简洁的阈值电压漂移模型,通过对ISE模拟结果进行曲线拟合对所提出的模型进行了验证。Different channel lengths irradiation of PDSOI NMOSFETs were simulated with ISE TCAD to explore the relationship of the channel length and the threshold voltage shift. The results indicate that the shorter the channel length, the greater the threshold voltage shift for the back channel MOSFET, and the threshold voltage shift is correlated with the applied bias configurations during irradiation. This effect can be called as enhancive short channel effect. The mechanism of this effect is introduced based on the theory of the short channel effect and a compact model based on the short channel effect model was presented, and it was verified by curve fitting with the results of simulation.

关 键 词：绝缘体上硅 总剂量效应 沟道长度 辐照 阈值电压漂移 

分 类 号：TN386[电子电信—物理电子学] O432.1[机械工程—光学工程]