应用于纳米制造的新型电子束抗蚀剂Calixarene的工艺研究  

Process Research of Novel Electron Beam Lithography Resist Calixarene Used in Nanofabrication

作　　者：赵珉[1] 陈宝钦[1] 刘明[1] 任黎明[2] 谢常青[1] 朱效立[1] 安南[3] 

机构地区：[1]中国科学院微电子研究所纳米加工与新器件集成实验室,北京100084 [2]北京大学物理学院,北京100871 [3]国家纳米科学中心,北京100080

出　　处：《纳米技术与精密工程》2009年第3期275-278,共4页Nanotechnology and Precision Engineering

基　　金：国家重点基础研究发展计划(973)项目(2006CB0N0604)

摘　　要：为了满足电子束光刻(EBL)对高分辨率、性能优秀抗蚀剂的需求,研究了将Calixarene衍生物作为电子束抗蚀剂在胶液配制、电子束曝光及显影等工艺过程中的相关技术.其中电子束曝光实验在JEOL JBX-5000LS系统上进行.实验结果表明,在入射电子能量50 keV、束流50 pA的条件下,Calixarene可以方便地形成50 nm的单线、50nm等线宽与间距的图形结构.通过与常用电子束抗蚀剂的对比,总结了Calixarene在电子束光刻性能上的优缺点,并分析了其成因.作为一种新型的高分辨率电子束光刻抗蚀剂,Calixarene有望应用在纳米结构制造、纳米尺寸器件及电路的研制等领域.In order to meet electron beam lithography＇s（EBL） requirement for high resolution resist, the related techniques of taking Calixarene ramification as EBL resist in such processes as resist solution preparation, exposure and development were studied. JEOL JBX-5000LS electron beam lithography system was used in the experiment. The results show that under the conditions of 50 keV electron energy and 50 pA beam current, it is easy for Calixarene to form the figure of 50 nm single line or 50 nm lines and space. The advantages and disadvantages of Calixarene EBL resist were summarized through comparison with the common resists and their causes were also analyzed. As a new kind of EBL resist, Calixarene is expected to be used successfully in the fabrication of nano-structures, nano-scale devices and circuits.

关 键 词：纳米制造 电子束光刻 工艺技术 电子束抗蚀剂 CALIXARENE 

分 类 号：TN305.7[电子电信—物理电子学] TN405