氧气气氛对氧化铪薄膜性能的影响  

Influence of Oxygen Atmosphere on Properties of Hafnium Oxide Thin Films

作　　者：惠迎雪[1] 杨陈[2] 田玉祥[1] 徐均琪[1] 

机构地区：[1]西安工业大学陕西省薄膜技术与光学检测重点实验室,西安710032 [2]西北工业大学材料学院,西安710072

出　　处：《西安工业大学学报》2009年第3期205-208,213,共5页Journal of Xi’an Technological University

基　　金：陕西省教育厅项目(06JK278);西安工业大学校长基金(XGYXJJ0501)

摘　　要：在有氧和无氧气氛条件下,采用真空电子束热蒸发技术在P-Si(100)硅衬底上制备了HfO2薄膜.利用X射线光电子能谱,对薄膜的化学组分进行表征,利用椭偏法对薄膜的膜厚和折射率进行测定,利用紫外可见光谱测量了薄膜的在200 nm^1 200 nm范围内的光透过率,并计算出其光学能隙,利用C-V测试系统对退火后薄膜的介电性能进行测试.结果表明,有氧和无氧条件下制备的薄膜中组分含量存在明显差异,相比于无氧条件下制备的薄膜,有氧条件下制备的薄膜中含有较少的铪单质,因而在可见光范围内具有较高透光率和光学能隙,较低的折射率和更优异的介电性能.Hafnium oxide thin films were prepared on p-type Si（100） substrates by electron beam evaporation chamber under oxygen or oxygen-free atmosphere respectively. The chemical components and optical properties of the HfO2 films were investigated by X-ray photoelectron spectroscopy （XPS）, spectroscopic ellipsometry （SE） and ultraviolet visible spectroscopy （UV-Vis）. Then the values of the band gap of the films were estimated from the transmission spectrum of film in the wavelength range from 200 nm to 1 200 nm. Further, The C-V characteristics of the samples after annealing were investigated by means of capacitance-voltage characteristics tester. The results show that the hafnium contents in the HfO2 films prepared under oxygen and oxygen-free atmosphere are remarkably different. The films prepared with oxygen atmosphere show better optical and dielectric properties because the contents of hafnium in the films were lower than that of the films prepared without oxygen condition.

关 键 词：电子束蒸发 HFO2薄膜 透过率 椭偏仪 C-V特性 

分 类 号：TB383.2[一般工业技术—材料科学与工程]