金属有机物化学气相沉积生长的a(110)面GaN三角坑缺陷的消除研究  

The triangular pits eliminate of (110) a-plane GaN growth by metal-orgamic chemical vapor deposition

作　　者：许晟瑞[1] 张进城[1] 李志明[1] 周小伟[1] 许志豪[1] 赵广才[1] 朱庆伟[1] 张金凤[1] 毛维[1] 郝跃[1] 

机构地区：[1]西安电子科技大学微电子学院,宽禁带半导体材料与器件教育部重点实验室,西安710071

出　　处：《物理学报》2009年第8期5705-5708,共4页Acta Physica Sinica

基　　金：国家自然科学基金重点项目(批准号:60736033);国家科技重大专项(批准号:2008ZX01002)资助的课题~~

摘　　要：用金属有机物化学气相沉积方法在r面蓝宝石上生长了非极性a面GaN薄膜,通过采用AlGaN多量子阱插入层,得到了高质量的非极性GaN材料.用原子力显微镜和高分辨X射线衍射仪研究了a面GaN的表面形貌和结晶质量,发现非极性材料上典型的三角坑缺陷被消除,(110)面X射线双晶摇摆曲线的半峰宽为680″.Nonpolar a-plane （1120） GaN has been grown on r-plane （1102） sapphire by metal-orgamic chemical vapor deposition. The crystal quality has been greatly improved by using the MGaN muhiple-quantum-well interlayers. The surface morphology and the crystal quality were investigated by high resolution X-ray diffraction and atomic force microscopy. The triangular pits were eliminated completely. The precession of the X-ray diffraction symmetric reflection peak full with width at half maximum of （1120） is 680″.

关 键 词：GAN 原子力显微镜 高分辨X射线衍射仪 非极性 

分 类 号：O474[理学—半导体物理]