磨料对计算机硬盘NiP基板CMP质量的影响  

Influence of Abrasive on CMP Quality for NiP Substrate of Computer Hard-disk

作　　者：田军[1] 刘玉岭[1] 檀柏梅[1] 牛新环[1] 

机构地区：[1]河北工业大学微电子技术与材料研究所,天津300130

出　　处：《河北工业大学学报》2009年第5期81-85,共5页Journal of Hebei University of Technology

基　　金：高校博士点基金(20050080007);国家自然科学安全联合基金(10676008)

摘　　要：磁盘表面质量直接影响了硬盘的磁存储密度,表面须达到优异的表面光滑度、没有表面缺陷.本文通过对镍磷基板的化学性质分析,讨论了其CMP机理,分析了浆料中的磨料在硬盘基板CMP中的重要性,指出浆料中的磨料不仅起到了机械研磨的作用,同时也充当了微型搅拌器的作用;通过实验分析了碱性浆料下磨料的浓度和粒径对镍磷基板CMP去除速率与表面粗糙度的影响;选用小粒径、低硬度的二氧化硅水溶胶磨料实现了较高的去除速率和较低的表面粗糙度.The storage density of disk is influenced directly by surface quality, so the best surface smooth and non surface defects are required for substrate surface. In this paper, the chemical character of NiP substrate of computer disk was analyzed, the CMP mechanism was discussed, action of abrasive in slurry on NiP film CMP was analyzed. It was indicated that the abrasive in slurry not only has the effect of grinding but also acts as micro-stirrer during CMP process. According to the experiments the effect of silica sol size and concentration in alkali slurry on removal rate and roughness of NiP substrate were analyzed and the higher removal rate was obtained. Low roughness was realized with small size and low hardness silica sol as abrasive,

关 键 词：硬盘基板 CMP 磨料 粗糙度 去除速率 

分 类 号：TN305.2[电子电信—物理电子学]