用镍硅氧化物源横向诱导晶化的多晶硅薄膜  

Crystallized poly-silicon thin film laterally induced by the Ni/Si oxide source

作　　者：刘召军[1,2] 孟志国[1] 赵淑云[2] 郭海成[2] 吴春亚[1] 熊绍珍[1] 

机构地区：[1]南开大学信息学院光电子薄膜器件与技术研究所,天津300071 [2]香港科技大学电子及计算机工程系

出　　处：《物理学报》2010年第4期2775-2782,共8页Acta Physica Sinica

基　　金：国家自然科学基金重点项目(批准号:60437030);天津市自然科学基金(批准号:05YFJMJC01400)资助的课题~~

摘　　要：采用磁控溅射法,以镍硅合金为靶,制备了一种适用于金属诱导横向晶化的氧化物镍源——自缓释镍源.该镍源在内部构成和晶化现象上都不同于纯金属镍源.采用该镍源制备低温多晶硅材料,晶化速率不明显依赖于镍源薄膜的厚度,且晶化多晶硅膜内的残余镍量亦可有效降低,可为薄膜晶体管提供宽的工艺窗口.本文对用纯金属镍源所得多晶硅薄膜的晶化率、表面粗糙度、电学特性等与溅射条件的关系进行了研究,并对相应结果进行了讨论.With a Nickel-Silicon alloy as a target of magnetron-sputtering under Ar /O2 mixed gases,a new type of Ni/Si oxide source called self-released nickel source is fabricated.This kind of nickel source is different with the pure nickel source at both crystallized phenomenon and remainder of Ni.Low temperature poly-Silicon crystallized by self-released nickel source has lower nickel-residua and a controllable crystallization rate related without the thickness of Ni source.That is useful for widen process window.The relations of surface roughness and electrical characters of poly-Si crystallized by different source have been studied and discussed.

关 键 词：自缓释 金属诱导横向晶化 多晶硅薄膜 低温制备与退火 

分 类 号：TN304.055[电子电信—物理电子学]