表面光电压测量P型硅抛光片少子扩散长度及铁杂质含量的研究  

Study on Surface Photovoltage Measurement of Minority Carrier Diffusion Length and Iron Contamination in P\|Type Silicon Polished Wafers

作　　者：屠海令[1] 朱悟新[1] 王敬[1] 周旗钢[1] 张椿[1] 孙燕[1] 

机构地区：[1]北京有色金属研究总院,北京100088

出　　处：《Journal of Semiconductors》1999年第3期237-241,共5页半导体学报（英文版）

摘　　要：表面光电压法近年来在半导体晶片的电学特性研究中发挥了重要作用 .本文简述了该方法的测量原理 ,给出了直径 1 2 5mm硅抛光片少子扩散长度及铁杂质浓度的测量数据 ,讨论了生产工艺对硅抛光片表面质量的影响 .Surface photovoltage (SPV) method plays an important role in the study on electrical characterization of semiconducting wafers in recent years. In this paper, the principle of SPV measurement is introduced, and the measurement data of minority carrier diffusion length and iron contamination in silicon polished wafers with a diameter of 125mm are presented. Effect of manufacturing process on the surface quality of silicon wafers is also discussed.

关 键 词：表面光电压法 硅 抛光片 少子扩散长度 测量 

分 类 号：TN304.12[电子电信—物理电子学] TN305.2