ICP刻蚀在GaAs p-i-n工艺中的应用  

ICP Etching for GaAs p-i-n Process

作　　者：张力江[1] 幺锦强[1] 崔玉兴[1] 付兴昌[1] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《微纳电子技术》2010年第8期503-506,共4页Micronanoelectronic Technology

摘　　要：基于GaAs p-i-n器件的制造工艺,介绍了器件制造过程中关键工艺步骤p-i层的去除方法,并总结分析了在p-i层去除过程中不同的方法对工艺结果造成的影响。分别采用了湿法腐蚀和干法刻蚀的方法制作了器件,结果表明采用湿法腐蚀的方法去除p-i层时,由于腐蚀的各项异性造成的影响无法消除,会影响器件的性能。阐述了影响干法刻蚀的设备因素和工艺因素,讨论分析了不同的气体、腔体的真空度以及不同的功率对最终结果的影响。最终得到刻蚀均匀、稳定的干法刻蚀条件,将ICP干法刻蚀工艺引入GaAs p-i-n器件制造。Based on the process of GaAs p-i-n,the etching methods of p-i layers and its effect on the process results were presented.Two different diodes were fabricated by wet etching and dry etching,respectively.The results show that the anisotropy effect cannot be avoided with wet etching,and will affect the performance of the device.Then the influence of the equipment and process on the dry etching was analyzed.The effects of different gases,chamber vacuum degrees and powers on the etching result were discussed.Finally,the uniform and stable dry etching conditions were obtained,and the ICP etching process was introduced for the fabrication of GaAs p-i-n devices.

关 键 词：GAAS 感应耦合等离子体 P-I-N二极管 湿法腐蚀 干法刻蚀 

分 类 号：TN305.7[电子电信—物理电子学]