无Cr腐蚀液显示直拉Si单晶中的氧化诱生层错  

Chromium-Free Etching Solution Showing Czochralski Silicon Oxidation Induced Stacking Faults

作　　者：刘云霞[1] 周旗钢[1] 孙燕[1] 石宇[1] 曹孜[1] 李惠[1] 

机构地区：[1]北京有色金属研究总院有研半导体材料股份有限公司,北京100088

出　　处：《半导体技术》2010年第8期787-790,共4页Semiconductor Technology

基　　金：国家02重大科技专项项目(2008ZX02401)

摘　　要：Si抛光片的氧化诱生层错(OSF)是一种重要的工艺诱生缺陷,为提高Si抛光片质量,应对氧化诱生层错的产生有充分的认识和了解,并加以克服,而简单、快捷、准确地显示缺陷是首要条件。介绍了采用环保的无Cr腐蚀液显示氧化诱生层错,实验发现无Cr腐蚀液能很好地显示氧化诱生层错,比较了无Cr腐蚀液和其他常用腐蚀液的缺陷腐蚀形貌,探讨了无Cr腐蚀液的腐蚀机理及腐蚀条件。实验发现环保的无Cr腐蚀液能很好地显示直拉Si单晶中的氧化诱生层错,能应用于生产。Si polished wafers oxidation induced stacking fault（OSF） is a very important process induced defects in microelectronic devices,and it will have very harmful effects.To improve the quality of Si polished wafers,it needs to have full knowledge and understanding of response to the oxidation induced stacking faults,a simple and quick and accurate indication of defects is the most important thing.Environmental friendly chrome-free etching solution was introduced for showing oxidation induced stacking fault.It is found by experiments that chromium-free etching solution can be a very good show for oxidation induced stacking faults,the defects of chromium-free etching solution is compared with other common etching solution,the corrosion mechanism of chromium-free etching solution and corrosion conditions are discussed.The results show that the environmental protection chromium-free etching solution can be a very good show for czochralski Si oxidation induced stacking fault,and it can be used in production.

关 键 词：氧化诱生层错 无铬腐蚀液 硅单晶 检测 抛光片 

分 类 号：TN304.1[电子电信—物理电子学]