Ni(W)Si/Si肖特基势垒二极管电学特性研究  

Investigation on Electrical Characteristics of N(iW)Si/Si Schottky Barrier Diode

作　　者：王胜[1] 黄伟[1] 张树丹[1] 许居衍[1] 

机构地区：[1]中国电子科技集团公司第58研究所,江苏无锡214035

出　　处：《电子与封装》2010年第10期24-27,共4页Electronics & Packaging

摘　　要：文中首次提出在Ni中掺入夹层W的方法来提高NiSi的热稳定性。具有此结构的薄膜,经600℃～800℃快速热退火后,薄层电阻保持较低值,小于2Ω/□。经Raman光谱分析表明,薄膜中只存在NiSi相,而没有NiSi2生成。Ni(W)Si的薄层电阻由低阻转变为高阻的温度在800℃以上,比没有掺W的镍硅化物的转变温度的上限提高了100℃。Ni(W)Si/Si肖特基势垒二极管能够经受650℃～800℃不同温度的快速热退火,肖特基接触特性良好,肖特基势垒高度为0.65eV,理想因子接近于1。A novel technique to add a thin W interlayer in the nickel film was firstly put forward to improve the thermal stability of nickel silicide. After RTA temperature about 600℃-800℃, Ni （W） Si film exhibited low sheet resistances, whose value was less than 2 Ω/□. Raman spectral analysis both show there existed NiSi phase but no NiSi2 phase in the Ni （W） Si film. The transformation temperature from low resistance phase to high resistance phase increased to 800℃ at least, which was 100℃ higher than that of NiSi. The electrical characteristics of fabricated Ni （W） S i/Si Schottky Barrier Diode was satisfactory. The barrier height and the ideal factor of the devices were about 0.65eV and close to 1. It further improves that the presence of W element in Nickel silicide is effective in promoting thermal stability and electrical characteristics of Nickel monosilicide.

关 键 词：Ni(W)Si 肖特基势垒二极管 XRD RAMAN光谱 快速热退火 

分 类 号：TN304[电子电信—物理电子学]