大面积金刚石膜/Si衬底复合片均匀性研究  

Uniformity of large area diamond film/Si composite piece

作　　者：张营营[1] 李成明[1] 陈良贤[1] 刘金龙[1] 黑立富[1] 吕反修[1] 

机构地区：[1]北京科技大学材料科学与工程学院,北京100083

出　　处：《金刚石与磨料磨具工程》2010年第5期44-48,共5页Diamond & Abrasives Engineering

基　　金：863计划支持项目(2008AA03Z408)

摘　　要：对直流电弧等离子体喷射化学气相沉积技术,在φ76.2 mm的Si衬底上沉积得到的金刚石膜,通过SEM和激光Raman表征其质量均匀性。为缓解金刚石膜/Si复合片的内应力,采用台阶式冷却的方式,对样品在1 050℃进行真空退火处理,使样品内的压应力从3.09 GPa减小到1.16 GPa。对样品生长面进行机械抛光,采用表面轮廓仪检测其表面粗糙度均匀性。结果表明:在76.2 mm的金刚石膜/Si复合片上获得的表面粗糙度小于5 nm。The large area diamond films were deposited on φ76.2 mm Si substrates by DC-arc plasma jet chemical vapor deposition.The quality and uniformity of the diamond films specimen were analyzed by SEM and Raman spectrum scope.In order to reduce the residual stress of diamond film/Si composite piece,the specimens were annealed using step cooling at the temperature of 1 050 ℃in vacuum.The result shows that the compressive stress of the specimen is reduced from 3.09 GPa to 1.16 GPa.The surface roughness of diamond films is less than 5 nm by surface profiler after the growth face of the specimen is polished.

关 键 词：金刚石膜 均匀性 真空退火 表面粗糙度 

分 类 号：TQ164[化学工程—高温制品工业]