ULSI硅衬底CMP速率稳定性的研究  

Study on the Stability of Removal Rate of CMP for Silicon Wafer in ULSI

作　　者：赵巧云[1] 周建伟[1] 刘玉岭[1] 刘效岩[1] 刘海晓[1] 

机构地区：[1]河北工业大学微电子研究所,天津300130

出　　处：《半导体技术》2010年第12期1167-1169,1182,共4页Semiconductor Technology

基　　金：国家自然科学基金联合基金(10676008);国家科技重大专项课题(2009ZX02308)

摘　　要：介绍了ULSI硅衬底的抛光工艺,并对其抛光机理进行了理论分析。通过对抛光液循环使用过程中CMP速率稳定性及其影响因素进行深入系统的分析,得出pH值、抛光温度和黏度等因素的变化是影响抛光速率稳定性的主要原因。并提出改进方案:控制好温度范围和流量的改变,以及循环中适当增加新的抛光液。为CMP速率稳定性的研究提供了有意义的借鉴。The polishing process of ULSI Si substrate was introduced,and its mechanism was analyzed in theory.Through the polishing process recycling rate stability and its influencing factors of the CMP in-depth analysis of the system,the of changes pH value,polishing temperature and viscosity are impact factors as the main reason polishing rate stability.And the improvement plans were put forward,including good control of the temperature range,attention to the flow of change,and the increase of the new polishing on cycle appropriately.The research for the CMP rate stability provides a significant reference.

关 键 词：化学机械抛光 硅衬底 去除速率 循环抛光 稳定性 

分 类 号：TN305.2[电子电信—物理电子学]