硅双极功率晶体管镇流技术的改进  

Improvement of Ballasting for Silicon Bipolar Power Transistor

作　　者：周蓉[1] 胡思福[1] 张庆中[1] 

机构地区：[1]电子科技大学微电子科学与工程系,成都610054

出　　处：《电子科技大学学报》1999年第5期486-489,共4页Journal of University of Electronic Science and Technology of China

基　　金：四川省应用基础研究专项基金

摘　　要：从可靠性和功率增益两方面对现有硅双极功率晶体管镇流技术作了仔细分析，并提出了改进措施。结果表明，采用改进的复合镇流技术，不仅有效地防止热斑和电流二次击穿现象，提高了器件的可靠性和工作寿命，而且有助于提高器件的功率增益。From the reliabi1ity and the gain, the existing ballasting resistor for si1icon bipolar power transistor is carefully ana]yzed, and the improved method is proposed. The results indicate the improved compound ballasting resistor n0t only effectively prevents the 'Runaway' and the second breakdown caused by current concentrating, improves transistor's re1iability and life time, but also helps improve power transistor's power gain.

关 键 词：硅化物 氮化钛 镇流电阻 双极晶体管 功率晶体管 

分 类 号：TN322.8[电子电信—物理电子学] TN323.4