PZT铁电薄膜的反应离子刻蚀研究  

Research on Reactive Ion Etching of PZT Ferroelectric Thin Film

作　　者：束平[1] 王姝娅[1] 张国俊[1] 戴丽萍[1] 翟亚红[1] 王刚[1] 钟志亲[1] 曹江田[1] 

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,四川成都610054

出　　处：《压电与声光》2011年第3期464-466,471,共4页Piezoelectrics & Acoustooptics

基　　金：国家"八六三"计划基金资助项目(2002AA404500);国家"九七三"计划基金资助项目(G1999033105)

摘　　要：介绍了一种刻蚀效果良好的PZT铁电薄膜反应离子刻蚀方法。利用深反应离子刻蚀设备研究了反应离子刻蚀中刻蚀气氛、刻蚀功率及刻蚀气体流量等因素对PZT薄膜刻蚀效果的影响。实验结果表明,刻蚀气体采用SF6、刻蚀功率为250 W、SF6/Ar总流量为25 cm3/min(其中SF6∶Ar为20∶5)时刻蚀效果最优。利用优化后的工艺条件制作出可用于铁电存储器的铁电电容并测试其电学特性,得到了较理想的电滞回线和漏电流。A novel reactive ion etching process of PZT thin film was presented.The effects of the etching atmosphere,etching power and etching gas flow on PZT thin film were investigated with the deep reactive ion etching（DRIE） facilities.It is experimentally demonstrated that the best etching effect can be obtained when using SF6 as etching gas,250 W of etching power and 25 cm3/min of total SF6/Ar flow（in which SF6∶Ar of 20∶5）.The ferroelectric capacitor used in the ferroelectric memory was fabricated by using the optimized process conditions and the electric features have been tested,and fine electric hysteresis loop line and leakage current were obtained.

关 键 词：PZT薄膜 光刻胶 深反应离子刻蚀 刻蚀速率 铁电电容 

分 类 号：TN405.98[电子电信—微电子学与固体电子学]