4H-SiC同质外延层中的扩展缺陷研究  

Study on Extended Defects in 4H-SiC Epitaxial Layers

作　　者：闫果果[1] 孙国胜[1] 吴海雷[1] 王雷[1] 赵万顺[1] 刘兴昉[1] 董林[1] 郑柳[1] 曾一平[1] 

机构地区：[1]中国科学院半导体研究所材料中心,北京100083

出　　处：《半导体光电》2011年第3期359-362,共4页Semiconductor Optoelectronics

基　　金：国家自然科学基金项目(60876003);中国科学院项目(Y072011000);中科院知识创新项目(Y072011000)

摘　　要：利用自主研发的热壁低压化学气相沉积(HWLPCVD)系统,在5.08 cm(2英寸)4°偏轴4H-SiC衬底上生长4H-SiC同质外延膜。讨论了4H-SiC同质外延层中的两种扩展缺陷——彗星缺陷和胡萝卜缺陷,研究了这两种缺陷的起源与消除方法。研究发现采用化学机械抛光(CMP)方法可以有效去除扩展缺陷,提高外延膜的质量。另外,提高衬底质量和优化生长条件也可以消除这两种扩展缺陷。4H-SiC epilayers were grown on 4°off-axis 4H-SiC substrates by employing a novel home-made horizontal hot wall low pressure chemical vapour deposition（HWLPCVD） system.The two extended defects-comet defects and carrot defects were investigated,and the origin and elimination of the extended defects were studied for the first time.Analytical results show that chemical mechanical polishing（CMP） is an effective way to eliminate the extended defects,and the quality of the epitaxial layers can be improved through this process.Improving the quality of the substrates and changing the growth condition can control the extended defects as well.

关 键 词：碳化硅 低压化学气相沉积 同质外延 扩展缺陷 

分 类 号：TN304.2[电子电信—物理电子学]